Title:
FORMING METHOD FOR CONTACT HOLE IN SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH0653333
Kind Code:
A
Abstract:
PURPOSE: To prevent overetching and simplify a step for forming a plurality of deep and shallow contact holes in a semiconductor device.
CONSTITUTION: A photolithographically antireflective film 14 (a TiN film in this embodiment) is formed on an insulating film 5 for forming contact holes. Then, contact holes 6a, 7a, and 8a are formed by use of this antireflective film 14.
Inventors:
USHIGOE TAKATOSHI
Application Number:
JP20374992A
Publication Date:
February 25, 1994
Filing Date:
July 30, 1992
Export Citation:
Assignee:
OKI ELECTRIC IND CO LTD
International Classes:
H01L21/302; H01L21/3065; H01L21/768; (IPC1-7): H01L21/90; H01L21/302
Attorney, Agent or Firm:
Toshiaki Suzuki
Next Patent: MANUFACTURING FOR SEMICONDUCTOR DEVICE