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Title:
FORMING METHOD FOR METALLIC PLUG
Document Type and Number:
Japanese Patent JPH0653332
Kind Code:
A
Abstract:

PURPOSE: To provide a barrier metal in a good embedded state even at a contact hole having a high aspect ratio along with good barrier characteristics between a wiring layer and a lower semiconductor.

CONSTITUTION: A contact hole 3 is opened in an insulating layer 2 on a semiconductor substrate 1, and a wiring layer is embedded after a barrier metal made up of a refractory metallic layer 4 and/or a refractory metallic alloy compound layer 5a is formed at a contact hole 3. An impurity plasma beam with a directional characteristic is cast, as indicated by an arrow (p), on the refractory metallic layer 4 and/or the refractory metallic alloy compound layer 5a. Then, an impurity is implanted at least into an intergranular part of the refractory metallic layer 4 and/or the refractory metallic alloy compound layer 5a at a bottom part of the contact hole 3.


Inventors:
MIYAMOTO TAKAAKI
GOCHO TETSUO
Application Number:
JP1992000201330
Publication Date:
February 25, 1994
Filing Date:
July 28, 1992
Export Citation:
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Assignee:
SONY CORP
International Classes:
H01L21/285; H01L21/28; H01L21/3205; H01L21/768; H01L23/52; (IPC1-7): H01L21/90; H01L21/285; H01L21/3205
Attorney, Agent or Firm:
Hidekuma Matsukuma