To provide a forming method of a transparent conductive film made of metal oxide by sputtering by which the temp. increase of a substrate and the increase in resistivity of the formed conductive film can be suppressed and the film forming rate can be easily controlled.
In this forming method of a transparent conductive film made of metal oxide on a substrate by using a sputtering device, a metal oxide is used as a target and plasma is produced using a 13.56 to 100 MHz high frequency power supply f, and at the same time, a target potential E is controlled so as to be -150 to 50 V by a DC power supply. The film forming rate of the transparent conductive film on the substrate is controlled by the electric power supplied from the high frequency power supply.
OKI TATSUMA
HASEGAWA HIDEKI