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Patent Searching and Data


Title:
FORMING METHOD OF TRANSPARENT CONDUCTIVE FILM
Document Type and Number:
Japanese Patent JP2000087219
Kind Code:
A
Abstract:

To provide a forming method of a transparent conductive film made of metal oxide by sputtering by which the temp. increase of a substrate and the increase in resistivity of the formed conductive film can be suppressed and the film forming rate can be easily controlled.

In this forming method of a transparent conductive film made of metal oxide on a substrate by using a sputtering device, a metal oxide is used as a target and plasma is produced using a 13.56 to 100 MHz high frequency power supply f, and at the same time, a target potential E is controlled so as to be -150 to 50 V by a DC power supply. The film forming rate of the transparent conductive film on the substrate is controlled by the electric power supplied from the high frequency power supply.


Inventors:
HOSHI YOICHI
OKI TATSUMA
HASEGAWA HIDEKI
Application Number:
JP25367998A
Publication Date:
March 28, 2000
Filing Date:
September 08, 1998
Export Citation:
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Assignee:
MITSUBISHI RAYON CO
International Classes:
H01B13/00; C23C14/08; (IPC1-7): C23C14/08; H01B13/00