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Title:
GALLIUM NITRIDE SUBSTRATE PRODUCTION METHOD
Document Type and Number:
Japanese Patent JP2015231943
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing a gallium nitride substrate having a little carbon left.SOLUTION: A gallium nitride substrate production method includes treating the surface of a gallium nitride substrate by using wax containing carbon, while fixing the gallium nitride substrate. After this step was executed, the gallium nitride substrate is cleaned by using a rinsing liquid thereby to reduce the quantity of carbon on the surface of the gallium nitride substrate so that the peak intensity ratio of GaLα/CKα of the spectrum which is obtained by energy dispersive X-ray analysis with an acceleration voltage, of 3 kV, of an electron beam radiated to the surface of the gallium nitride substrate, is set to 2 or more.

Inventors:
YAMAMOTO SHUNSUKE
Application Number:
JP2015122628A
Publication Date:
December 24, 2015
Filing Date:
June 18, 2015
Export Citation:
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Assignee:
SCIOCS CO LTD
International Classes:
C30B33/00; B24B1/00; B24B37/00; C30B29/38; H01L21/205; H01L21/304; H01L21/306
Domestic Patent References:
JP2009212284A2009-09-17
JP2009212284A2009-09-17
Foreign References:
WO2005041283A12005-05-06
WO2005041283A12005-05-06
Attorney, Agent or Firm:
福岡 昌浩
阿部 廣美
橘高 英郎
白鳥 昌宏