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Title:
GAS CHARGING METHOD TO GAS CYLINDER AND GAS CHARGING DEVICE
Document Type and Number:
Japanese Patent JP2000120992
Kind Code:
A
Abstract:

To charge high purity gas into a gas cylinder without performing evacuation to a high vacuum condition by evacuating the gas cylinder while injecting gaseous argon or the like into it and filling the gas cylinder with semiconductor processing gas after the gas inside the gas cylinder is replaced in charging of semiconductor processing gas into the gas cylinder.

In charging of semiconductor processing gas into a gas cylinder 4, the gas cylinder 4 is connected to a gas charger 1 first of all. In this process, valves 20-23 in purge gas supply lines 10, 11 are opened so that gaseous nitrogen is discharged from a supply source 14 to the connection parts between cylinder valves 5, 6 and the purge gas supply lines 10, 11 for purge processing of base metal parts in the cylinder valves 5, 6. Subsequently, valves 31, 33 are closed, and gaseous nitrogen in the lines is discharged via purge gas discharge lines 12, 13, a main discharge line 19, and a detoxification device 47. Afterwards, gas inside the gas cylinder 4 is replaced with argon or the like fed from a supply source 15, and then, the gas cylinder 4 is filled with semiconductor processing gas fed from a supply source 16.


Inventors:
HANESAKA SATOSHI
KATO HIROYUKI
MASUDA YUKITOMO
SAKAI YUICHIRO
Application Number:
JP1998000298836
Publication Date:
April 28, 2000
Filing Date:
October 20, 1998
Export Citation:
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Assignee:
NIPPON OXYGEN CO LTD
International Classes:
F17C5/02; F17C3/00; H01L21/302; H01L21/3065; (IPC1-7): F17C5/02; F17C3/00; H01L21/3065
Attorney, Agent or Firm:
Masatake Shiga (9 outside)