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Title:
GATE DRIVE TECHNIQUE FOR BIDIRECTIONAL SWITCH, AND POWER CONVERTER THAT USES THE SAME
Document Type and Number:
Japanese Patent JP2011172298
Kind Code:
A
Abstract:

To provide a low-loss gate drive technique by preventing overcurrent and overvoltage incidences in various components in unintended transient periods, when a bidirectional device is applied as a semiconductor device applied to an inverter or the like.

There is provided the gate drive technique that controls a bidirectional switch 1 which is equipped with a first gate terminal 2, a second gate terminal 3, a drain terminal 4, and a source terminal 5, and possesses four operating modes in which the first gate terminal 2 and second gate terminal 3 are variously ON and/or OFF. The gate drive technique uses a control module for controlling so that the bidirectional switch 1 does not shift directly when shifting from a bidirectionally OFF state to a bidirectional ON state. The gate drive technique operates the bidirectional switch 1 mainly in an operation mode without bidirectional intervention of a diode, and can operate the bidirectional switch 1 with intervention of the diode in the transient periods, thereby obtaining effects of preventing overcurrent and overvoltage incidences in the various components.


Inventors:
MORIMOTO ATSUSHI
Application Number:
JP2008158679A
Publication Date:
September 01, 2011
Filing Date:
June 18, 2008
Export Citation:
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Assignee:
PANASONIC CORP
International Classes:
H02M1/08; H01L21/337; H01L27/095; H01L29/80; H01L29/808; H02M1/00; H02M7/48
Attorney, Agent or Firm:
Fumio Iwahashi
Hiroki Naito
Daisuke Nagano