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Patent Searching and Data


Title:
GATE ELECTRODE OF MULTIGATE FIELD-EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2012069942
Kind Code:
A
Abstract:

To provide a new gate electrode structure and a method of manufacturing the same, in a multigate field-effect transistor.

A gate electrode 100 of a multigate field-effect transistor 102 comprises: a semiconductor substrate 104; a dielectric layer 106 on the semiconductor substrate; fins 108 on the dielectric layer; gate insulating films 110, which are gate insulating films on the side surfaces of the fins, that are not formed on the top surface of the dielectric layer except for the top surface portion of the dielectric layer contacting the gate insulating films; a gate electrode layer 112 on the fins; and a polysilicon layer 114 formed so as to cover the fins.


Inventors:
TSUCHIYA YOSHINORI
IIJIMA RYOSUKE
YAGISHITA JUNJI
Application Number:
JP2011185506A
Publication Date:
April 05, 2012
Filing Date:
August 29, 2011
Export Citation:
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Assignee:
TOSHIBA CORP
International Classes:
H01L29/786; H01L21/28; H01L21/336; H01L21/8234; H01L27/088; H01L29/423; H01L29/49
Attorney, Agent or Firm:
Kurata Masatoshi
Takakura Shigeo
Satoshi Kono
Makoto Nakamura
Yoshihiro Fukuhara
Takashi Mine
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Kocho Chojiro
Naoki Kono
Katsu Sunagawa
Morisezo Iseki
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi
Takenori Masanori