Title:
GROWTH OF SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JP3520571
Kind Code:
B2
Abstract:
PURPOSE: To obtain a single crystal with few through defects by introducing at least one specific point on the growth surface of a seed crystal and growing a single crystal on the growth surface.
CONSTITUTION: Ti, etc., having about 100μm diameter and about 20μm height are circularly vapor-deposited on the center of the growth surface 2 of a seed crystal 1 such as SiC, etc., and the Ti deposited film is masked and etched with a molten alkali to form a projecting specific point 10. The raw powder of SiC, etc., and the seed crystal 1 having the specific point 10 are set in a graphite crucible, the seed crystal 1 is heated to 2000-2300°C, and the raw powder of SiC is heated to a temp. about 80°C higher than that of the seed crystal 1 and sublimated. A single crystal is grown from the seed crystal 1 with the specific point 10 as the center of the screw dislocation 3, the crystal growth proceeds by the spiral step growth around the screw dislocation 3, and a single crystal having a through defect 7 only at the center of the screw dislocation 3 is obtained. A wafer 9 is then cut out from the single crystal part 11 other than the defective part, and a single crystal substrate free of the through defect 7 is obtained.
Inventors:
Kitahata, Makoto
Application Number:
JP19941794A
Publication Date:
April 19, 2004
Filing Date:
August 24, 1994
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
C30B23/00; C30B29/36; H01L21/203; (IPC1-7): C30B29/36
Other References:
Ｊｕｎ ＴＡＫＡＨＡＳＨＩ ｅｔ ａｌ．，Ｓｕｂｌｉｍａｔｉｏｎ ｇｒｏｗｔｈ ｏｆ ＳｉＣ ｓｉｎｇｌｅ ｃｒｙｓｔａｌｌｉｎｅ ｉｎｇｏｔｓ ｏｎ ｆａｃｅｓ ｐｅｒｐｅｎｄｉｃｕｌａｒ ｔｏ ｔｈｅ （０００１） ｂａｓａｌ ｐｌａｎｅ，Ｊｏｕｒｎａｌ ｏｆ Ｃｒｙｓｔａｌ Ｇｒｏｗｔｈ，１９９４年１月， Ｖｏｌ．１３５， Ｎｏ．１−２，ｐｐ．６１−７０
Attorney, Agent or Firm:
岩橋 文雄 （外２名）