Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
HEAT TREATMENT DEVICE AND METHOD
Document Type and Number:
Japanese Patent JP2014077624
Kind Code:
A
Abstract:

To solve problems that a size of a crystal grain diameter is limited even when a long time such as dozens of hours is spent because crystallization occurs at comparatively low temperature, and in particular, heat treatment at high temperature is difficult to realize crystallization without damaging or deforming a semiconductor layer on an inexpensive glass substrate and it is extremely difficult to make the crystal grain diameter large.

A heat treatment device includes mechanisms capable of keeping a substrate inside the device in at least three kinds of temperature zones, comprising a first temperature mechanism capable of keeping the substrate in a relatively low temperature zone, a second temperature mechanism capable of keeping the substrate in a high temperature zone, and a third temperature mechanism capable of keeping the substrate in an intermediate temperature zone sequentially in this order. Also, the heat treatment device includes a movement mechanism for relatively moving three kinds of heat sources and the substrate.


More Like This:
Inventors:
SAITO MITSUHISA
OKUMURA TOMOHIRO
Application Number:
JP2013000170095
Publication Date:
May 01, 2014
Filing Date:
August 20, 2013
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
PANASONIC CORP
International Classes:
F27B9/36; C01B33/02; F27D11/02; F27D11/08; H05B3/68; H01L31/04
Domestic Patent References:
JP2000082677A2000-03-21
JP2004091293A2004-03-25
JP2004099357A2004-04-02
JPS5855393A1983-04-01
JP2003051505A2003-02-21
JP2011121049A2011-06-23
JP2012248560A2012-12-13
JP2002198322A2002-07-12
JP2000082677A2000-03-21
JP2004091293A2004-03-25
JP2004099357A2004-04-02
JPS5855393A1983-04-01
JP2003051505A2003-02-21
JP2011121049A2011-06-23
JP2012248560A2012-12-13
Attorney, Agent or Firm:
徳田 佳昭
藤井 兼太郎
寺内 伊久郎