Title:
HEAT TREATMENT OF THIN FILM
Document Type and Number:
Japanese Patent JP3221149
Kind Code:
B2
Abstract:
PURPOSE: To form a polycrystalline thin film whose crystal grain size is large by a melting and recrystallization operation by effectively executing a heat treatment.
CONSTITUTION: A heating layer 2 which is composed of, e.g. a Ge film or an Mo film is formed on a substrate 1, and an Si thin film 4 is formed on it via an SiO2 film 3 as a buffer layer. The Si thin film 4 is first irradiated with a laser beam L1 having a wavelength which is transparent with reference to the Si thin film and whose absorption coefficient is large with reference to the heating layer 2, and the Si thin film 4 is then irradiated with a laser beam L2 having a wavelength which is absorbed by the Si thin film 4 after a prescribed delay time has elapsed.
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Inventors:
Durham Pal Gosain
Toshiyuki Samejima
Masaki Hara
Naoki Sano
Atsushi Kono
Setsuo Usui
Jonathan Westwater
Toshiyuki Samejima
Masaki Hara
Naoki Sano
Atsushi Kono
Setsuo Usui
Jonathan Westwater
Application Number:
JP9695793A
Publication Date:
October 22, 2001
Filing Date:
March 31, 1993
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01L21/20; H01L21/268; H01L21/324; (IPC1-7): H01L21/20
Domestic Patent References:
| JP6380521A | ||||
| JP61141117A |
Attorney, Agent or Firm:
Masatomo Sugiura