PURPOSE: To reduce the connection resistance of an upper layer wiring with a lower later wiring in a multilayer wiring of a semiconductor device.
CONSTITUTION: In the connection of an upper layer wiring having a laminated structure consisting of a second conductive film 3 which consists of a titanium tungsten used as an adhesive metal, and a fourth conductive film 8, which exists on the film 3 and consists of gold which is used as a main wiring material, with a lower layer wiring, a high-resistivity titanium tungsten film does not exist on the connection part between an upper layer gold wiring and a lower layer gold wiring and a gold film of the upper layer wiring and a gold film of the lower layer wiring are directly connected to each other.