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Title:
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPH0661355
Kind Code:
A
Abstract:

PURPOSE: To reduce the connection resistance of an upper layer wiring with a lower later wiring in a multilayer wiring of a semiconductor device.

CONSTITUTION: In the connection of an upper layer wiring having a laminated structure consisting of a second conductive film 3 which consists of a titanium tungsten used as an adhesive metal, and a fourth conductive film 8, which exists on the film 3 and consists of gold which is used as a main wiring material, with a lower layer wiring, a high-resistivity titanium tungsten film does not exist on the connection part between an upper layer gold wiring and a lower layer gold wiring and a gold film of the upper layer wiring and a gold film of the lower layer wiring are directly connected to each other.


Inventors:
URABE KOJI
Application Number:
JP20867492A
Publication Date:
March 04, 1994
Filing Date:
August 05, 1992
Export Citation:
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Assignee:
NEC CORP
International Classes:
H01L21/28; H01L21/3205; H01L21/768; H01L23/52; (IPC1-7): H01L21/90; H01L21/28; H01L21/3205
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)



 
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