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Title:
INSULATED GATE SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2002033647
Kind Code:
A
Abstract:

To provide an IGBT(insulated gate bipolar transistor) processing a large current that can surely be protected from destruction due to a short- circuit current and an over-current.

For example, sense resistors 11, 12 are connected in series with an emitter of the IGBT element 10. A comparator 13a in a protection circuit 3 compares a short-circuit sense voltage sensed by the sense resistors 11, 12 with a 1st fixed value. When the short-circuit sense voltage exceeds the 1st fixed value, the comparator 13a outputs a signal to turn off a gate of the IGBT element 10. Furthermore, a comparator 13b compares an over- current sense voltage sensed by the sense resistor 12 with a 2nd fixed value. When the over-current sense voltage exceeds the 2nd fixed value, the comparator 13b outputs a signal to turn off the gate of the IGBT element 10.


Inventors:
KIJIMA SHOICHIRO
Application Number:
JP2000216278A
Publication Date:
January 31, 2002
Filing Date:
July 17, 2000
Export Citation:
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Assignee:
TOSHIBA CORP
International Classes:
H01L27/04; H01L29/78; H03K17/08; H03K17/56; (IPC1-7): H03K17/08; H01L29/78; H03K17/56
Attorney, Agent or Firm:
Takehiko Suzue (6 outside)



 
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