To provide an insulating film in which even if the film is made thinner, SBD and SILC are easily produced and high breakdown tolerance (improvement of SILC, TZDB, and TDDB) is obtained, a semiconductor device using it, highly reliable electronic device, and an electronic apparatus.
A semiconductor device 1 comprises a semiconductor substrate having a channel region 21, a source region 22, and a drain region 23 and a gate insulative film 3 and a gate electrode 5 laminated on the channel region 21. The gate insulative film 3 is structured by using an insulative inorganic material containing silicon and at least one sort of elements other than silicon as a main material and contains a hydrogen atom. When a gate insulative film 3 in the state in which an electric field has not been applied is measured by Fourier transform infrared absorption spectrum method in a room temperature, absorbance of infrared rays in the range of wave number 3200 to 3500 cm-1 is equal to or lower than 0.02.
JPS6233466 | MANUFACTURE OF SEMICONDUCTOR DEVICE |
WO/2007/064492 | DIELECTRIC INTERFACE FOR GROUP III-V SEMICONDUCTOR DEVICE |
UEHARA MASAMITSU
Kazuo Asahi
Next Patent: INSULATIVE GATE TYPE SEMICONDUCTOR DEVICE