INTERNAL VOLTAGE GENERATING CIRCUIT AND NON-VOLATILE SEMICONDUCTOR MEMORY IN SEMICONDUCTOR DEVICE

Japanese Patent JPH0668690

A

PURPOSE: To improve a withstand voltage characteristic of a transistor being a constituting element of a semiconductor device.

CONSTITUTION: When one of operation power supply voltage of an output stage is shifted in a level, the other voltage also is shifted in a level in accordance with the above. A voltage generating circuit includes a node N1 to which an output of a negative voltage generating circuit 8 is sent, a voltage detecting circuit 392 which detects a voltage level of the node N1, and a voltage conversion circuit 394 in which a voltage level of a node N2 is adjusted in accordance with an output of the voltage detecting circuit 392. The voltage conversion circuit 394 operates with voltage of the node N1 and N2 as the operation power supply voltage. Since difference of the operation power supply voltage does not increase larger than the prescribed value, voltage impressed to constituting elements is the prescribed voltage value or below, and a sufficient withstand voltage characteristic can be obtained even if scaling is progressed.

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NAKAYAMA TAKESHI
TERADA YASUSHI
MIYAWAKI YOSHIKAZU
FUTATSUYA TOMOSHI
KOBAYASHI SHINICHI

JP10075293A

March 11, 1994

April 27, 1993

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MITSUBISHI ELECTRIC CORP

G05F3/24; G11C5/14; G11C16/06; G11C16/12; G11C16/30; G11C17/00; H02M3/07; H03K19/00; (IPC1-7): G11C16/06; G05F3/24; H02M3/07; H03K19/00

JPH02139798A	1990-05-29
JPS59167900A	1984-09-21

深見 久郎 (外3名)

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