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Patent Searching and Data


Title:
ION SPUTTERING DEVICE AND METHOD
Document Type and Number:
Japanese Patent JPH0452276
Kind Code:
A
Abstract:

PURPOSE: To improve the efficiency of sputtering by providing a power source for forming a glow discharge which can independently control the impressed voltage for each of plural target metals.

CONSTITUTION: The thin film consisting of the mixture composed of the plural target metals 11, 12 is formed on the surface of a sample 5 by the glow discharge between the plural target metals 11, 12 and single sample 5, such as semiconductor wafer, in a vacuum chamber 20. The power source 61 for forming the glow discharge is, thereupon, so provided that the impressed voltage for each of the plural target metals 11, 12 can be controlled independently from each other. The compsn. ratios of the formed thin film are varied in the thickness direction in this way and the thin films varying in the compsn. ratios are freely laminated.


Inventors:
MIYAZAWA KOICHI
Application Number:
JP1990000159795
Publication Date:
February 20, 1992
Filing Date:
June 20, 1990
Export Citation:
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Assignee:
HITACHI NAKA SEIKI KK
International Classes:
C23C14/34; C23C14/46; C23C14/54; (IPC1-7): C23C14/34; C23C14/54