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Title:
ION SPUTTERING DEVICE
Document Type and Number:
Japanese Patent JPH0633231
Kind Code:
A
Abstract:

PURPOSE: To obtain a clean and precise coating film and simultaneously to automatize the operation of a complicated exhaust system for obtaining such a film by keeping the purity of a process gas in a vacuum chamber at a high level and keeping the pressure thereof at a low level at the time of a sputtering operation with an ion sputtering device.

CONSTITUTION: An exhaust system pipeline 30 for reducing the internal pressure of the vacuum chamber 1 is equipment with an oil-sealed rotary vacuum pump 7 and a turbo-molecular pump 9 for a high vacuum exhaust attached with a pumping speed-variable valve 8, and an auxiliary valve 19 or the like attended thereon. The vacuum chamber 1 is at first set in the state of a coarse exhaust, and thereafter in the state of a high vacuum and finally in the atmosphere of a process gas at a pressure suitable for an electric discharge by automatically controlling the oil-sealed rotary pump 7, turbomolecular pump 9, pumping speed- variable valve 8, auxiliary valve 19 and a process gas supply system 31 by a control circuit 33.


Inventors:
MIYAZAWA KOICHI
Application Number:
JP1992000192012
Publication Date:
February 08, 1994
Filing Date:
July 20, 1992
Export Citation:
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Assignee:
HITACHI SCIENCE SYSTEMS LTD
International Classes:
C23C14/22; C23C14/34; C23C14/54; (IPC1-7): C23C14/34; C23C14/22
Attorney, Agent or Firm:
Akio Takahashi (1 person outside)



 
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