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Patent Searching and Data


Title:
ITO SPUTTERING TARGET AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2011252223
Kind Code:
A
Abstract:

To provide an ITO sputtering target which hardly generates cracks even if a content of Sn is small, and particularly hardly generates cracks when bonded to a packing plate.

The ITO sputtering target contains 5 mass% or lower of Sn at SnO2 conversion, and is -650 to -200 MPa in residual stress. The residual stress is preferable to be -600 to -200 MPa when a thermal expansion coefficient of the packing plate to which the ITO sputtering target is bonded is 2.386×10-5/°C, and also preferable to be -650 to -250 MPa when the thermal expansion coefficient is larger than 2.386×10-5/°C. The ITO sputtering target is hardly cracked even if the content of SnO2 is not larger than 5 mass%. and hardly cracked even if bonded to the copper packing plate or the like.


Inventors:
MAZAKI TAKANORI
Application Number:
JP2010000128924
Publication Date:
December 15, 2011
Filing Date:
June 04, 2010
Export Citation:
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Assignee:
MITSUI MINING & SMELTING CO
International Classes:
C23C14/34; C04B35/00
Attorney, Agent or Firm:
特許業務法人SSINPAT