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Patent Searching and Data


Title:
LASER BEAM MARKING METHOD TO Si WAFER
Document Type and Number:
Japanese Patent JP2000343253
Kind Code:
A
Abstract:

To precisely mark while controlling a dot diameter and a marking depth to an arbitrary value.

Based on the characteristic table prepared beforehand, marking is performed while adjusting a laser beam oscillator, laser beam attenuator, laser beam expander, etc. A shot number of a laser beam in the laser beam oscillator is adjusted with referring the characteristic table showing the relation between a marking depth and a shot number (step 2-2), the laser power in the laser beam attenuator is adjusted with referring the characteristic table showing the relation between a dot diameter and power (step 2-4), a magnification in the laser beam expander is adjusted with referring the characteristic table showing the relation among a dot diameter, a marking depth and a beam diameter (step 2-5).


Inventors:
TAKAHASHI FUMITAKE
Application Number:
JP14932399A
Publication Date:
December 12, 2000
Filing Date:
May 28, 1999
Export Citation:
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Assignee:
NEC CORP
International Classes:
B23K26/00; H01L21/02; B23K101/40; (IPC1-7): B23K26/00; H01L21/02
Attorney, Agent or Firm:
Yoshiyuki Iwasa