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Title:
LIGHT EMISSION DIODE OF MULTIICOLOR AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JPS54123884
Kind Code:
A
Abstract:
PURPOSE:To cause a plurality of lights different in the center wave length from one chip and to make incident many types of lights to one optical fiber, by forming compound semiconductor crystal film different in the ratio of crystal mixture toward broadwise and providing a plurality of diffusion regions different in depth. CONSTITUTION:On the semiconductor substrate 1, the first conduction type compound semiconductor layer 2 in which the AlAs concentration is changed for the crystal mixture ratio as 0 to 0.3, is grown, and in it, the regions 3 to 5 of the second conduction type are formed by diffusion by respectively making different for the depth from the surface and the SiO2 film 11 is coated between them. Further, the electrode 6 is attached to the rear side of the substrate 1 and the electrodes 7 to 9 are respectively attached to the regions 3 to 5. After this, when a given voltage is fed to the electrodes 6 to 9, different wave length light is caused from the PN junction formed with the respective regions. Thus, by providing the optical fiber 10 so that these regions are covered, the light is incident via the film 11 and greater capacity optical communication can be possible.

Inventors:
ONO YUUICHI
ITOU KAZUHIRO
MORI MITSUHIRO
AOKI MASAAKI
KURATA KAZUHIRO
Application Number:
JP2995878A
Publication Date:
September 26, 1979
Filing Date:
March 17, 1978
Export Citation:
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Assignee:
HITACHI LTD
International Classes:
H01L27/15; H01L33/08; H01L33/30; H01L33/38; H01L33/40; (IPC1-7): H01L33/00
Domestic Patent References:
JPS5199987A1976-09-03
JPS5448188A1979-04-16