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Title:
LIGHT EMITTING DIODE DEVICE WHERE SELECTIVE GROWTH IS APPLIED
Document Type and Number:
Japanese Patent JP3728305
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To provide a light emitting diode device where selective growth is applied.
SOLUTION: An oxidation layer is formed on a surface of a substrate. The oxidation layer is patterned and a buffer layer is selectively grown on the oxidation layer by using lateral direction growing technology. An n-type gallium nitride layer, an active layer and a p-type gallium nitride layer are sequentially grown and an electrode is manufactured on the buffer layer so as to complete the light emitting diode device.


Inventors:
陳 隆建
藍 文厚
簡 奉任
Application Number:
JP2003000296612
Publication Date:
December 21, 2005
Filing Date:
August 20, 2003
Export Citation:
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Assignee:
▲さん▼圓光電股▲ふん▼有限公司
International Classes:
H01L33/12; H01L33/32; H01L33/40; (IPC1-7): H01L33/00
Domestic Patent References:
JP11261169A
JP200351612A
JP2001320087A
JP2000307184A
Attorney, Agent or Firm:
竹本 松司
杉山 秀雄
湯田 浩一
魚住 高博
手島 直彦



 
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