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Patent Searching and Data


Title:
LIGHT EMITTING ELEMENT AND FABRICATION THEREOF
Document Type and Number:
Japanese Patent JPH0653543
Kind Code:
A
Abstract:

PURPOSE: To realize a practical single crystal silicon light emitting element by employing a columnar structure having specific cross-sectional area through the use of single crystal silicon thereby exhibiting quantum effect.

CONSTITUTION: When a single crystal silicon substrate 1 is subjected to anisotropic etching through an etching window 4 made through a mask material 3 formed on a substrate 1, a side face 5 having a (111) facet is formed normally to the substrate and the side face 5 is protected by a mask material 6. When the mask material 3 is removed through etching except the top face part of the columnar structure and anisotropic etching is performed again, a side face 7 of the (111) facet is formed adjacent to the side face 5. The columnar structure is then oxidized by an appropriate thickness to form a columnar structure of single crystal silicon having cross-sectional area of 1000nm2 or less. Consequently, a light emitting element can be realized by depositing silicon oxide, exposing the silicon end part of columnar structure, depositing a conductive film becoming an electrode thereon, and then patterning.


Inventors:
HASHIGUCHI GEN
KANAZAWA TOMOSHI
SAKAMOTO HIKARI
Application Number:
JP20369292A
Publication Date:
February 25, 1994
Filing Date:
July 30, 1992
Export Citation:
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Assignee:
NIPPON STEEL CORP
International Classes:
H01L21/306; H01L33/08; H01L33/34; H01L33/40; H01S5/00; (IPC1-7): H01L33/00; H01L21/306; H01S3/18
Attorney, Agent or Firm:
八田 幹雄 (外1名)