LIGHT FADING LAYER FOR ENHANCING CONTRAST

Japanese Patent JPS62234148

A

An image is formed in a photoresist layer by imagewise exposing the layer with a light source of a predetermined wavelength, and providing a constrast-enhancing layer of a photo-bleachable cpd. (I) between the light source and the photoresist layer (I) is sensitive to light having the predetermined wavelength and having a ratio of extinction coefft. to mol. wt. of greater than 10 litres pre gram-cm when in the unbleached state and a ratio of extinction coefft. for the unbleached state to extinction coefft. for the bleached state of greater than 10, pref. greater than 30. (I) is pref. an aryl nitrole cpd. esp. where the (I) is alpha-(4-diethyl aminophenyl)-N-phenylnitrone (II) and the predetermined wavelength is 405 nm. Pref. the thickness of the photoresist layer is less than 3 microns and the thickness of the contrast enhancing layer is less than 1 microns. The contrast enhancing layeris esp. a spin castable compsn. comprising 100 pts. organic solvent, 1-30 pts. intert organic polymeric binder and 1-30 pts. of an aryl nitrone. The presence of the layer contg. (I) gives photoresist images of improved sharpness and which are esp. suitable for the prodn. of integrated circuits.

BURUUSU FUREDERITSUKU GURIFUIN
POORU RICHIYAADO UESUTO

JP1152087A

October 14, 1987

January 22, 1987

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GEN ELECTRIC

H01L21/00; C07C255/64; C07C291/02; C07D401/14; C07D455/00; C07D455/04; C07D471/00; G03C1/00; G03C1/72; G03F7/00; G03F7/004; G03F7/027; G03F7/09; G03F7/095; G03F7/11; H01L21/027; (IPC1-7): G03C1/00; G03F7/00; H01L21/30

JPS4988466A	1974-08-23
JPS477806A
JPS52148304A	1977-12-09

US3416922A

1968-12-17

Shusaku Yamamoto

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