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Patent Searching and Data


Title:
LIQUID PHASE EPITAXIAL WAFER FOR LIGHT EMITTING DIODE
Document Type and Number:
Japanese Patent JPH0653545
Kind Code:
A
Abstract:

PURPOSE: To obtain a wafer for LED having stabilized luminance characteristics by suppressing the effect of a GaAs wafer on the growth of p-type GaAlAs epitaxial layer, suppressing crystal defect and crystal distorsion, and eliminating negative effect on the luminance of a LED fabricated using such a wafer.

CONSTITUTION: In a GaAlAs epitaxial wafer having single-hetero structure for a light emitting diode, a p-type GaAs epitaxial layer 4 doped with Zn and In is grown on a p-type GaAs wafer 1 followed by growth of an epitaxial layer of a p-type GaAlAs 2 and an n-type GaAlAs 3.


Inventors:
KAMOGAWA HIROYUKI
Application Number:
JP20653092A
Publication Date:
February 25, 1994
Filing Date:
August 03, 1992
Export Citation:
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Assignee:
HITACHI CABLE
International Classes:
H01L21/208; H01L33/30; (IPC1-7): H01L33/00; H01L21/208
Attorney, Agent or Firm:
Takashi Matsumoto