PURPOSE: To eliminate the necessity of removing a malfunction due to a glass- rise thereby to be able to improve the yield and to reduce the number of steps of manufacturing a DHD type semiconductor device by forming a raised electrode with Ag paste by a printing method.
CONSTITUTION: In case of manufacturing a DHD type semiconductor device using an Si pellet 1 in which the surface of a peripheral step is protected by a glass 2, a raised electrode 4 is formed by a printing method with Ag paste. For example, mesa grooves 9 are formed on the periphery of each element of a wafer 11 in which an impurity is diffused to form many semiconductor elements, and a glass protecting film 2 is formed on the groove 9. Then, an oxide film 8 on the electrode of the element is removed to expose the electrode, and a deposited layer 3 of the electrode metal is formed here. Then, the Ag paste is printed by a mask 10 for a screen printing on the layer 3, baked to form an Ag bump 4. Thereafter, the wafer 11 is separated to individual pellets 1, and assembled into a glass-sealed DHD element.