Title:
MANUFACTURE OF INSULATED GATE TYPE FIELD EFFECT TRANSISTOR
Document Type and Number:
Japanese Patent JPS5732670
Kind Code:
A
Abstract:
PURPOSE: To obtain an insulated gate type field effect transistor in which a leakage current does not increase by doping a field inversion preventive impurity only on the side surface of a channel region.
CONSTITUTION: Insular semiconductor layers 14∼16 are formed on an insulating substrate 10, a source region 11 and a drain region 13 are formed at both sides of a channel region 12 at both ends of the layers 14∼16, and a field inversion preventive impurity is doped only on the side surface of the channel region 12.
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Inventors:
OOMORI YUKIO
Application Number:
JP10677880A
Publication Date:
February 22, 1982
Filing Date:
August 05, 1980
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
H01L21/331; H01L27/12; H01L29/73; H01L29/78; H01L29/786; (IPC1-7): H01L27/12; H01L29/06