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Patent Searching and Data


Title:
MANUFACTURE OF POLYCRYSTALLINE SILICON THIN FILM TRANSISTOR
Document Type and Number:
Japanese Patent JPH0562998
Kind Code:
A
Abstract:

PURPOSE: To protect the interface of a channel section with a gate insulating film against damage by a method wherein the upside of the channel section is protected by a mask layer of two-layered structure composed of an insulating film and a metal layer.

CONSTITUTION: A mask layer 116 of two-layered structure composed of a gate insulating film 112 and a lift-off metal layer 114 is provided onto the upside of an active layer 102 formed on the upside of a transparent substrate 100. The mask layer 116 is formed on the upper region of an active layer or a channel section 102 located under a gate electrode which is to be built. Then, a pre-ohmic layer formed on all the upside of the metal layer 114 are formed into a first and a second ohmic layer, 120a and 120b, by the lift-off of the metal layer 114 and the photolithographic etching of the pre-ohmic layer. Next, interlayer insulating layers 122 and 122a are provided, a contact hole is provided to them, and conductive metal is evaporated for the formation of a source electrode 114, a drain electrode 126, and a gate electrode 128.


Inventors:
MORI MIKIO
KAKINUMA HIROAKI
SAKAMOTO KATSUAKI
Application Number:
JP1991000220279
Publication Date:
March 12, 1993
Filing Date:
August 30, 1991
Export Citation:
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Assignee:
OKI ELECTRIC IND CO LTD
International Classes:
H01L27/12; H01L21/336; H01L29/78; H01L29/786; (IPC1-7): H01L21/336; H01L27/12; H01L29/784
Attorney, Agent or Firm:
Takashi Ogaki