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Patent Searching and Data


Title:
MANUFACTURE FOR SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2000124175
Kind Code:
A
Abstract:

To prevent disappearance of a metal wiring and an increase in resistance due to erosion by a method wherein, after ground by a chemical and mechanical grinding method, a grinding surface is brought into contact with a solution containing a reducer.

After an oxide film (an interlayer insulation film) 1 is formed on a lower layer wiring layer, a contact hole 2 is formed by lithography and dry-etching. Tungsten is used as a burying metal of the contact hole 2, and after a tungsten film 3 is formed, the tungsten film 3 is ground by a chemical and mechanical grinding method by use of a grinding liquid. It is ground until tungsten within the contact hole 2 is left behind, and the grinding is ended. Then, as an oxide film 4 made of tungsten is formed on the surface, the reducer is brought into contact with the surface, thereby reducing the tungsten oxide film 4 into a metal to form a tungsten burying layer 5. More preferably, by use of a grinding liquid in which a grinding metal is not fused out, and also after grinding, a ground surface is brought into contact with a solution containing the reducer.


Inventors:
SAITO AKIO
Application Number:
JP29386298A
Publication Date:
April 28, 2000
Filing Date:
October 15, 1998
Export Citation:
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Assignee:
HITACHI LTD
International Classes:
B24B57/02; B24B37/00; H01L21/304; (IPC1-7): H01L21/304; B24B37/00; B24B57/02
Attorney, Agent or Firm:
Kenjiro Take