PURPOSE: To eliminate residual tensile stress within metal wiring which causes poor stressmigration and obtain reliable metal wiring, by cooling a semiconductor substrate to a plastic deformation temperature or lower and then warming it to room temperature after forming the metal wiring.

CONSTITUTION: Gradually warming a semiconductor substrate 1 after cooling to an extremely low temperature expands Al wiring 9 and 12 more rapidly than the substrate 1, a layer insulating film 10, and a passivation film 13 around said wiring to begin to apply compressive stress to said Al wiring 9 and 12. This offsets the tensile stress remaining in the Al wiring 9 and 12 in annealing processing before cooling and the tensile stress generated in the Al wiring 9 and 12 in the process of cooling the substrate 1 by the compressive stress. Therefore, when the substrate 1 is warmed to room temperature, no stress or slight compressive stress exists within the Al wiring 9 and 12. This means the tensile stress in the Al wiring 9 and 12 is eliminated.