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Patent Searching and Data


Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS59200420
Kind Code:
A
Abstract:
PURPOSE:To make the edge of an aperture gently sloping without giving harmful influence to an insulating film by a method wherein, after a resist is provided as a mask, a contact hole is formed in the insulating film at first by wet etching and then by dry etching. CONSTITUTION:An aperture 15 for a contact hole is formed in a resist 14 on a diffusion layer 12 at the position where a contact hole is formed. When an intermediate insulating film 13 is subjected to wet etching using the resist 4 as a mask, a concave 16, which has a larger diameter than the aperture 15 and whose circumference warps upward with a gentle slope, is formed in the intermediate insulating film 13 corresponding to the aperture 15. When dry etching is applied, the intermediate insulating film 13 at the bottom of the concavity 16 is etched out vertically with the same dimensions as the aperture 15 and finally the diffusion layer 12 is exposed. Therefore, when this dry etching process is finished, a contact hole 17 is completed in the intermediate insulating film 13. Then the resist 14 is removed by a resist removing solution.

Inventors:
ARIMATSU AKIRA
Application Number:
JP7396283A
Publication Date:
November 13, 1984
Filing Date:
April 28, 1983
Export Citation:
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Assignee:
OKI ELECTRIC IND CO LTD
International Classes:
H01L21/306; H01L21/302; H01L21/3065; (IPC1-7): H01L21/302
Domestic Patent References:
JPS5690525A1981-07-22
JPS5687666A1981-07-16
JPS56157025A1981-12-04
Attorney, Agent or Firm:
Hiroshi Kikuchi