Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS59222937
Kind Code:
A
Abstract:
PURPOSE:To contrive accomplishment of high specific resistance on a polycrystalline silicon film by a method wherein the second region is selectively formed in the first region, the surfaces of said regions are covered, and oxygen ion is implanted in a polycrystalline silicon film. CONSTITUTION:An emitter region 3 is formed in a base region 2, and an ordinary planar transistor structure is formed. Subsequently, after the SiO2 film to be used for selective diffusion has been removed, a polycrystalline silicon film 4 is formed by performing a thermal decomposition of SiH4. Oxygen is ion-implanted, and an oxygen containing layer 5 is formed. The electrode of a transistor is formed by vapor-depositing an aluminum layer after the prescribed apertures 6 and 7 for contact have been formed on a polycrystalline silicon film 4 having an oxygen containing layer 5, and a base electrode 8 and an emitter electrode 9 are provided by processing an aluminum layer into an electrode pattern.
Inventors:
IHARA MASAHIRO
YOKOZAWA MASAMI
YOKOZAWA MASAMI
Application Number:
JP9837483A
Publication Date:
December 14, 1984
Filing Date:
June 02, 1983
Export Citation:
Assignee:
MATSUSHITA ELECTRONICS CORP
International Classes:
H01L29/73; H01L21/314; H01L21/331; (IPC1-7): H01L21/314; H01L29/72
Attorney, Agent or Firm:
Toshio Nakao