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Patent Searching and Data


Title:
MANUFACTURE OF SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JPS63261833
Kind Code:
A
Abstract:

PURPOSE: To enable silicon substrate surface area above the high-concentration buried layer or the single crystal silicon epitaxially grown thereon to obtain a good crystallizability by sequentially ion-implanting a P-type or an N-type impurity and fluorine into the silicon substrate.

CONSTITUTION: By an ion implanter, a P-type or an N-type impurity 4 accelerated to a predetermined energy is ion-implanted to a predetermined implantation amount. Then, for the substrate silicon of the region having experienced the ion implantation, the energy for the fluorine ion implantation is determined and fluorine is ion-implanted. Next, an anneal is performed for activating the P-type or N-type impurity, and then single crystal silicon 7 is epitaxially grown onto a buried layer 2. With this, the P-type or N-type high-concentration buried layer 2 having a good crystallizability comparable to that before the ion implantation can be achieved and simultaneously, the crystallizability of the single crystal layer grown thereon is not degraded.


Inventors:
YAMAGUCHI TSUTOMU
KOBAYASHI YOSHIHARU
SAKAKIBARA YUTAKA
YAMAMOTO YASUSUKE
Application Number:
JP1987000096842
Publication Date:
October 28, 1988
Filing Date:
April 20, 1987
Export Citation:
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Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
H01L21/265; H01L21/74; (IPC1-7): H01L21/265; H01L21/74