To provide element isolation of a III nitride compound semiconductor light-emitting element, electrode formation, and manufacture of an end-surface reflection mirror with no use of etching technology to a III nitride compound semiconductor where etching is difficult to be performed.

There are provided a first process where a dielectrics film is formed in a pattern on a light-emitting element board or on a substrate where a III nitride semiconductor film is formed on its surface, a second process where a III nitride compound semiconductor film is grown selectively in a region of the III nitride semiconductor film except for the dielectrics film, and a third process where a multilayer structure is formed which comprises at least a III nitride semiconductor light-emitting layer and a p-type III nitride compound semiconductor layer on the III nitride compound semiconductor film. Here, multilayer structure is thinner than the dielectrics film.