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Title:
半導体装置用多層回路基板の製造方法
Document Type and Number:
Japanese Patent JP3664720
Kind Code:
B2
Abstract:
The invention relates a method for producing a multilayer circuit board ( 50 ) for a semiconductor device, comprising using a composite metal sheet ( 14 ) in which two metal sheets are combined, forming, on each side of the composite metal sheet, pads for connecting to a semiconductor element, the pads being made of a metal material which is substantially not etched by an etchant for the metal sheet, and an insulating layer having openings exposing the pads, forming, on the insulating layer, a wiring line layer ( 26 ) connected to the pads and having pads for connecting to another wiring line layer to be subsequently formed, subsequently fabricating a multilayer circuit board body ( 20 ) by necessary numbers of insulating layers and wiring line layers alternately formed, forming, on the outermost insulating layer of the multilayer circuit board body, an insulating layer provided with through-holes exposing pads for external connecting terminals, which are located on the outermost insulating layer, then dividing the composite metal sheet, to yield intermediates ( 34 ) each provided on one side of the metal sheet with the multilayer circuit board body, and etching the metal sheet at an area at which a semiconductor element is to be mounted to remove the material of the metal sheet at that area, to thereby form a frame ( 10 ) surrounding the area for the mounting of the semiconductor element.

Inventors:
Junichi Nakamura
Shunichiro Matsumoto
Shoji Kodaira
Daiya Araya
Takanori Tabuchi
Takeshi Chino
Kiyotaka Shimada
Application Number:
JP2003541328A
Publication Date:
June 29, 2005
Filing Date:
October 29, 2002
Export Citation:
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Assignee:
Shinko Electric Industry Co., Ltd.
International Classes:
H01L21/48; H01L23/12; H01L23/36; H01L23/433; H05K3/00; H05K3/40; H05K3/46; H01L23/31; H05K3/20; H05K3/34; (IPC1-7): H01L23/12
Domestic Patent References:
JP2002083893A
JP2001185653A
JP2001068858A
JP11026938A
Attorney, Agent or Firm:
Takashi Ishida
Masaya Nishiyama
Higuchi Souji