Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP5098276
Kind Code:
B2
Abstract:
A semiconductor device having sufficient sensitivity, strength, and the like and a method for fabricating such a semiconductor device. In a method for fabricating a semiconductor device which detects the shape of a skin surface by detecting capacitance formed between the skin surface and a conductive film between which a passivation film including a silicon nitride film and a polyimide film is, the polyimide film with a thickness of not less than 400 nm nor more than 700 nm is formed at a curing temperature higher than or equal to 350° C. and lower than or equal to 380° C. as a top layer of the semiconductor device. When the polyimide film is cured, nitrogen gas or the like is made to flow in at a flow rate of 110 liters/minute or more. By adopting this method, a very thin passivation film is formed on a semiconductor device and a semiconductor device having sufficient sensitivity, strength, and the like can be fabricated.
Inventors:
Koichi Nagai
Application Number:
JP2006267856A
Publication Date:
December 12, 2012
Filing Date:
September 29, 2006
Export Citation:
Assignee:
Fujitsu Semiconductor Limited
International Classes:
H01L21/312; A61B5/117; G01B7/16; G01B7/28
Domestic Patent References:
| JP2006162345A | ||||
| JP2006014838A | ||||
| JP2002520841A | ||||
| JP2004267588A | ||||
| JP5214101A | ||||
| JP2007314614A | ||||
| JP2003269907A | ||||
| JP2002131906A | ||||
| JP3630483B2 | ||||
| JP2008045999A | ||||
| JP2003232604A | ||||
| JP2005008730A |
Attorney, Agent or Firm:
Takeshi Hattori