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Title:
MANUFACTURING METHOD OF SURFACE EMITTING SEMICONDUCTOR LIGHT-EMITTING ELEMENT, SURFACE EMITTING SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MOUNTING METHOD OF THE SAME, AND BONDED WAFER FOR SURFACE EMITTING SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Document Type and Number:
Japanese Patent JP2014044981
Kind Code:
A
Abstract:

To provide a manufacturing method of a surface emitting semiconductor light-emitting element, a surface emitting semiconductor light-emitting element and a mounting method of the same, and a bonded wafer for a surface emitting semiconductor light-emitting element, which can more efficiently radiate heat generated in an active layer.

A manufacturing method of a surface emitting semiconductor light-emitting element comprises: a process of epitaxially growing a plurality of compound semiconductor layers including an active layer on a first support substrate; a process of forming an upper electrode on the plurality of epitaxially-grown compound semiconductor layers; a process of bonding a second support substrate on the upper electrode via a joint metal layer; a process of removing the first support substrate by etching; a process of forming a lower electrode at a part from which the first support substrate is removed by etching; and a process of removing the second support substrate.


Inventors:
AKIMOTO KATSUYA
Application Number:
JP2012184972A
Publication Date:
March 13, 2014
Filing Date:
August 24, 2012
Export Citation:
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Assignee:
HITACHI METALS LTD
International Classes:
H01S5/183; H01S5/022
Attorney, Agent or Firm:
Nobuo Kinutani