Title:
MANUFACTURING METHOD OF TRENCH GATE TYPE SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2020092208
Kind Code:
A
Abstract:
To provide a technique that detects the presence of an abnormal electrode part on the basis of characteristics of a trench gate type semiconductor device.SOLUTION: A manufacturing method of a trench gate type semiconductor device includes the steps of: preparing a semiconductor substrate in which a trench is provided on the upper surface, the inner surface of the trench is covered with a gate insulating film, and a gate electrode is arranged in the trench; forming an interlayer insulating film covering the upper surface of the gate electrode and the upper surface of the semiconductor substrate; forming a contact hole at the bottom of the interlayer insulating film to expose the upper surface of the semiconductor substrate; forming a first metal layer covering the inner surface of the contact hole and the upper surface of the interlayer insulating film; and forming a second metal layer made of a metal different from the first metal layer, containing at least one of sodium ions and hydrogen ions, and containing nickel on the upper surface of the first metal layer by sputtering.SELECTED DRAWING: Figure 6
Inventors:
MIZUNO RYOTA
MUKAI FUMIYA
MUKAI FUMIYA
Application Number:
JP2018229392A
Publication Date:
June 11, 2020
Filing Date:
December 06, 2018
Export Citation:
Assignee:
TOYOTA MOTOR CORP
International Classes:
H01L29/78; H01L21/28; H01L21/285; H01L21/336; H01L29/739
Domestic Patent References:
| JP2017079239A | 2017-04-27 | |||
| JP2015065288A | 2015-04-09 | |||
| JP2017168684A | 2017-09-21 | |||
| JP2018046163A | 2018-03-22 |
Attorney, Agent or Firm:
Kaiyu International Patent Office