Title:
MEMBER FOR HEAT TREATMENT OF HIGH-PURITY CVD-SIC SEMICONDUCTOR AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3524679
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To make a member for heat treatment absorb infrared rays and facilitate heating by a method, wherein the content of each metal element is set at less than or equal to a specific ppm, thickness of a CVD-SiC plate is set in a specific range, and the maximum transmittance of infrared rays in an infrared ray region of a wavelength in a specific range is specified.
SOLUTION: Metal elements containing impurities in a CVD-SiC plate and each set at less than or equal to 0.3ppm. When the thickness is less than 0.1mm, the strength is insufficient. When the thickness exceeds 1mm, the heat capacity becomes large, and the plate is not suitable for RTP. The thickness of this part member is set to be 0.1-1mm. Crystal grain boundary of CVD-SiC is made columnar crystal 2 of β-SiC, parallel to an incident light and microcrystal 3 of α-SiC whose crystal growth is vertical to the direction of the incident light. Thereby the permeation of incident light is blocked, and heating by infrared rays being absorbed is aimed at. The maximum transmittance of infrared rays whose wavelength is 2.5-20μm is set at most 5%. Thereby the following properties of a temperature which absorb infrared rays for heating are improved, and heat treatment can be made further uniform and good.
Inventors:
Inaba, Takeshi
Takeda, Shuichi
Sato, Katsunori
Takeda, Shuichi
Sato, Katsunori
Application Number:
JP16191996A
Publication Date:
May 10, 2004
Filing Date:
June 21, 1996
Export Citation:
Assignee:
TOSHIBA CERAMICS CO LTD
International Classes:
B28B21/42; C04B35/565; C23C16/01; C23C16/42; C30B25/02; C30B29/36; H01L21/205; H01L21/22; H01L21/26; H01L21/31; B28B1/30; (IPC1-7): H01L21/22; B28B1/30; B28B21/42; C04B35/565; C23C16/01; C23C16/42; C30B29/36; H01L21/205; H01L21/26; H01L21/31
Attorney, Agent or Firm:
鈴江 武彦 （外６名）