PURPOSE: To enhance the fine processing property of an optical etching operation by a method wherein, before a mask pattern is formed, a beam having a prescribed energy is projected and the surface of a film is damaged physically.
CONSTITUTION: A transformed-layer formation chamber 12a as a treatment chamber and an etching chamber 12c are connected to a latent-image formation chamber 12b via respective gate valves 10b, 10c. A specimen 1 is placed on a specimen-holding stand 9a; the inside of the transformed-layer formation chamber 12a and a plasma chamber 13a is evacuated to produce a vacuum of 10-8Torr or lower. In succession, Ar gas at 20sccm is introduced into the plasma chamber 13a from a gas introduction port 11a; an evacuation apparatus is controlled in such a way that its inside pressure is at 2×10-4Torr. Then, an electric current is made to flow to an electromagnetic coil 14a; a magnetic field is generated inside the plasma chamber; microwaves are fed to the plasma chamber 13a from a microwave transmitting window 17a. The whole surface of an a-SiN film 3 on the specimen 1 is irradiated with an Ar+ ion beam 5 extracted from a generated plasma for two minutes. A denatured layer 4 in which the bond of a-SiN has been cut from the surface down to about 30 and in which damage such as the generation of a trap or the like has been caused is formed.
| JPH02101740 | PLASMA ETCHING DEVICE |
| JP2001254189 | PLASMA WORKING APPARATUS |
| JPH02179867 | PROCESS GAS SUPPLY SYSTEM |
KAWATE SHINICHI
KOMATSU TOSHIYUKI
