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Title:
METHOD FOR DEPOSITING FLAT AND HIGHLY REFLECTIVE LAYER AND SUBSTRATE FORMED BY THIS METHOD
Document Type and Number:
Japanese Patent JPH10130846
Kind Code:
A
Abstract:

To provide a chemical vapor growth method useful at the time of depositing a substantially flat and high reflective layer on a substrate and mode particularly packing the holes of a high aspect ratio existing at this substrate with a metal-contg. material.

This substrate 20 is arranged in a treatment region 95 and is subjected to a continuous seeding stage and bearing crystal growth stage. In the seeding stage, the substrate 20 is heated to a temp. TS within a lower first temp. range ΔTS and a seeding gas is introduced into the treatment region 95. This seeding gas forms a substantially continuous and non-granular flat seeding layer on the substrate 20. In the subsequent bearing crystal growth stage, the substrate 20 is maintained at a deposition temp. Td within a higher second temp. range ΔTD and a deposition gas is introduced into the treatment region 95. This deposition gas forms a bearing crystal growth layer 32 having the highly reflective surface formed by relatively large crystals of a high bearing characteristics grown on the seeding layer, on the seeding layer.


Inventors:
GUO TED TIE
NAIK MEHUL BHAGUBHAI
CHEN LIAN-YU
MOSELY RODERICK CRAIG
BEINGLASS ISRAEL
Application Number:
JP1997000290210
Publication Date:
May 19, 1998
Filing Date:
October 23, 1997
Export Citation:
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Assignee:
APPLIED MATERIALS INC
International Classes:
C23C14/56; C23C16/02; C23C16/20; C23C16/46; C23C16/52; C23C16/54; H01L21/205; H01L21/28; H01L21/285; H01L21/3205; H01L21/768; (IPC1-7): C23C16/46; C23C16/20; C23C16/52; C23C16/54; H01L21/285
Attorney, Agent or Firm:
中村 稔 (外6名)