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Patent Searching and Data


Title:
METHOD FOR DEVELOPING RESIST
Document Type and Number:
Japanese Patent JPS61249049
Kind Code:
A
Abstract:

PURPOSE: To obtain a fine pattern high in resolution by using a developing soln. contg. fatty acid esters in the specified b.p. range for developing a positive type radiation resist contg. a copolymer of a specified styrene type monomer and a specified acrylate type monomer.

CONSTITUTION: The positive type radiation resist contains a copolymer of repeating units each represented by formula I and those each represented by formula II, and in these formulae, R1, R2, R3 are each halogen, lower alkyl, lower haloalkyl, OH, CN NH2 or the like, R4 is lower alkyl, lower haloalkyl, or CN, and R5 is lower alkyl, lower haloalkyl, aryl, or aralkyl. This resist is developed with a developing soln. contg. fatty acid ester in the b.p. range of 70W180°C alone or in its mixture at room temp. thus permitting an image high in contrast to be formed.


Inventors:
SUGITA KAZUYUKI
UENO NOBUO
SASAKI SHIGERU
OSADA SHIRO
Application Number:
JP1985000091510
Publication Date:
November 06, 1986
Filing Date:
April 26, 1985
Export Citation:
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Assignee:
KURARAY CO
International Classes:
G03C1/72; G03F7/039; G03F7/30; G03F7/32; (IPC1-7): G03C1/72; G03C5/24; G03F7/00