To provide a method for cleaning a wafer suited to pre-processing or post-processing for micro machining semiconductor device, using a single-tank wafer cleaning device.

This cleaning method is used to clean a wafer arranged vertically in a tank, by jetting a chemical solution and a cleaning water oblequely upward or obliquely downward. This method includes a step for dipping the wafer in the tank where the cleaning water is filled and streamed, a step for cleaning the wafer by supplying a first chemical solution that an ammonium, hydrogen peroxide and water are mixed at a volume ratio of NH4OH:H2O2: water = 1:1:X1 (where X1: >20 and <70) and using an upward stream, a step for applying a dip cleaning, a step to for supplying a second chemical solution that an ammonium, hydrogen peroxide and water are mixed at a volume ratio of 1:1:X2 (X2>X1) and has a cleaning performance and to substitute the first chemical solution with the second chemical solution, a step for applying QDR cleaning, and a step to supply a rinsing water and rinse the water by using the upward stream rinsing water.