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Title:
METHOD AND DEVICE FOR FORMING III-V GROUP ELEMENT SEMICONDUCTOR LAYER
Document Type and Number:
Japanese Patent JPS5752127
Kind Code:
A
Abstract:
The invention is a method and apparatus for growing group III-V semiconductor layers by molecular beam deposition in which a gaseous source is used to form a molecular beam comprising M2 or M4 molecules, where M is a group V element. Arsine and phosphine may be decomposed in a high temperature leak-source to provide As2 and P2 molecular beams for molecular beam epitaxy of group III-V semiconductors such as GaAs and InP.

Inventors:
GUREN DAGURASU KUBIAKU
Application Number:
JP11308881A
Publication Date:
March 27, 1982
Filing Date:
July 21, 1981
Export Citation:
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Assignee:
WESTERN ELECTRIC CO
International Classes:
C30B23/02; C30B23/06; C30B25/02; H01L21/203; (IPC1-7): H01L21/203; H01L21/263