Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
METHOD FOR ENHANCING SEMICONDUCTOR CHIP TRANSVERSE STRENGTH USING LASER
Document Type and Number:
Japanese Patent JP2000124176
Kind Code:
A
Abstract:

To decrease grinding scratches by a method wherein a laser irradiates a backside of a wafer ground so as to reach a predetermined thickness by a whetstone, so that the surface is partially molten.

Grinding scratches occurred in grinding are left behind on a backside of a semiconductor chip, and a semiconductor chip 4 is mounted on a stand having a clearance of 10 mm, and a force is applied on a center part of the chip to acquire a magnitude of a force when the semiconductor chip is broken, and when transverse strength of the semiconductor chip is measured, it is made clear that each depth of scratches influences the transverse strength. A laser irradiates backside of a wafer ground so as to reach a predetermined thickness by a whetstone to melt the surface partially. More specifically, a YAG laser 2 is irradiated on the back surface of a wafer 1 while scanning. The irradiated semiconductor chip is cut out, and when the transverse strength is measured, the grinding scratches are flattened by laser irradiation to be in a substantially mirror face, and it is realized that the transverse strength is enhanced.


Inventors:
HONDO TSUTOMU
Application Number:
JP32435998A
Publication Date:
April 28, 2000
Filing Date:
October 10, 1998
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
SHARP TAKAYA DENSHI KOGYO KK
International Classes:
B23K26/352; H01L21/304; (IPC1-7): H01L21/304; B23K26/00