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Title:
METHOD FOR FORMING METAL FILM
Document Type and Number:
Japanese Patent JPH10209153
Kind Code:
A
Abstract:

To form a metal film with an improved adhesion property on a semiconductor substrate by implanting a metal ion species with a strong bonding force for a metal film that is formed by a next process to a ground layer consisting of the non-metallic material of a semiconductor substrate and then forming the metal film.

By considering the physical property values of a ground layer 14 and Al ion, optimum injection conditions are obtained in advance by a simulation calculation such as the Monte Carlo method. Then, under the injection conditions, Al atoms are subjected to ion implantation into the ground layer 14, thus forming an alloy layer 16 consisting of Si and Al atoms on the ground layer 15. Then, an Al film 18 is formed by the sputtering method. Therefore, since the bonding force between the Al film 18 and Al atoms injected into the alloy layer 16 is strong, an adhesion property for the ground layer 14 of the Al film 18 is greatly improved. Also, to improve an adhesion property, a heat treatment process that has been performed after forming a metal film can be eliminated.


Inventors:
IWANAGA SUSUMU
Application Number:
JP1997000007905
Publication Date:
August 07, 1998
Filing Date:
January 20, 1997
Export Citation:
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Assignee:
SONY CORP
International Classes:
H01L21/28; H01L21/265; H01L21/3205; (IPC1-7): H01L21/3205; H01L21/265; H01L21/28