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Title:
METHOD FOR FORMING SILICON-CONTAINING DEPOSIT ON METALLIC SUBSTRATE SURFACE, CORROSION RESISTANT TREATMENT OF METALLIC SUBSTRATE AND METALLIZED POLYMER SUBSTRATE
Document Type and Number:
Japanese Patent JP3403219
Kind Code:
B2
Abstract:

PURPOSE: To provide a method for forming a deposit contg. silicon on a metallic substrate surface.
CONSTITUTION: This method consists in simultaneously or continuously executing (1) a stage for treating the surface of the metallic substrate by an electric discharge using a dielectric barrier and (2) a stage for exposing the surface of the metallic substrate to an atmosphere contg. a gaseous silicon compd. and executing the stages (1) and (2) under a pressure higher than 10,000 Pa. Further, the method for subjecting the metallic substrate to a corrosion resistant treatment and the metallized polymer substrate are provided.


Inventors:
Slootman, Frank
Bouard, Pascal
Application Number:
JP1993000144474
Publication Date:
May 06, 2003
Filing Date:
June 16, 1993
Export Citation:
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Assignee:
L'air, Liquide
International Classes:
B32B9/00; C23C16/02; C23C16/18; C23C16/24; C23C16/40; C23C16/44; C23C16/503; (IPC1-7): C23C16/44; B32B9/00; C23C16/18; C23C16/40
Attorney, Agent or Firm:
八木田 茂 (外2名)