METHOD FOR FORMING SILICON-CONTAINING DEPOSIT ON METALLIC SUBSTRATE SURFACE, CORROSION RESISTANT TREATMENT OF METALLIC SUBSTRATE AND METALLIZED POLYMER SUBSTRATE - Rail Liquide-Societe Anonym a Directoire et Conseille de Surveillance Pool Retude e Rex Prowation de Procede Georges Claude

Title:

METHOD FOR FORMING SILICON-CONTAINING DEPOSIT ON METALLIC SUBSTRATE SURFACE, CORROSION RESISTANT TREATMENT OF METALLIC SUBSTRATE AND METALLIZED POLYMER SUBSTRATE

Document Type and Number:

Japanese Patent JP3403219

Kind Code:

B2

Abstract:

PURPOSE: To provide a method for forming a deposit contg. silicon on a metallic substrate surface.
CONSTITUTION: This method consists in simultaneously or continuously executing (1) a stage for treating the surface of the metallic substrate by an electric discharge using a dielectric barrier and (2) a stage for exposing the surface of the metallic substrate to an atmosphere contg. a gaseous silicon compd. and executing the stages (1) and (2) under a pressure higher than 10,000 Pa. Further, the method for subjecting the metallic substrate to a corrosion resistant treatment and the metallized polymer substrate are provided.

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Inventors:

Slutman Frank
Boir Pascal

Application Number:

JP14447493A

Publication Date:

May 06, 2003

Filing Date:

June 16, 1993

Export Citation:

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Assignee:

Rail Liquide-Societe Anonym a Directoire et Conseille de Surveillance Pool Retude e Rex Prowation de Procede Georges Claude

International Classes:

C23C16/02; C23C16/18; C23C16/24; C23C16/40; B32B9/00; C23C16/44; C23C16/503; (IPC1-7): C23C16/44; B32B9/00; C23C16/18; C23C16/40

Domestic Patent References:

JP4358069A
JP5755U

Attorney, Agent or Firm:

Shigeru Yagita (2 outside)

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