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Title:
METHOD FOR GROWING SILICON SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPH0753294
Kind Code:
A
Abstract:

PURPOSE: To obtain a silicon single crystal with one time of FZ stage from a silicon raw material rod.

CONSTITUTION: One end of the silicon raw material rod 1 is immersed into molten silicon 3 and is partially melted; thereafter, the silicon raw material rod is pulled up to form a cone part 2 of long crystal grains which are recrystallized. The silicon raw material rod 1 is partially heated to melt with this cone part 2 as a starting point to form a molten zone 5. This molten zone 5 is moved from one end to the other end of the silicon raw material rod 1 while a static magnetic field is impressed thereto, to grow the silicon single crystal 8.


Inventors:
KIMURA MASAKI
YOKOO NARIYUKI
Application Number:
JP21806193A
Publication Date:
February 28, 1995
Filing Date:
August 09, 1993
Export Citation:
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Assignee:
SHINETSU HANDOTAI KK
International Classes:
C30B13/30; C30B29/06; H01L21/208; (IPC1-7): C30B13/30; C30B29/06
Attorney, Agent or Firm:
志波 邦男 (外1名)



 
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