Title:
METHOD OF MAKING FOR SEMICONDUCTOR LASER ELEMENT AND CLEAVING DEVICE
Document Type and Number:
Japanese Patent JP3444536
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To efficiently and surely cleave a bar-like element joint body having a groove for cleavage formed by etching into a plurality of semiconductor laser elements.
SOLUTION: A pattern electrode 13 is provided on a semiconductor laminated body 11 in which a plurality of semiconductor layers including an active layer are laminated, and a plurality of grooves 15 for cleavage are formed by etching, parallel to the pattern electrode 13, and then a plurality of pattern electrodes 13 parallel to each other are formed. A first cleaving is performed along a direction crossing orthogonally the respective grooves 15 for cleavage, so as to form a plurality of bar-like element joint body 16, and the obtained bar-like element joint body 16 is placed on a supporting sheet 23 provided on a supporting base of a cleaving device. A specified load is given by a pressing body 22 to the joint body 16 which is still covered with the protection sheet 23, and the joint body 16 is moved parallelly moved in the lengthwise direction thereof at a specified speed.
Inventors:
Hirotsugu Yamane
Hideto Adachi
Akira Takamori
Hideto Adachi
Akira Takamori
Application Number:
JP30317999A
Publication Date:
September 08, 2003
Filing Date:
October 25, 1999
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H01S5/02; B28D5/00; H01L21/00; (IPC1-7): H01S5/02
Domestic Patent References:
| JP5763845A | ||||
| JP62137894A | ||||
| JP62296578A | ||||
| JP6338662A |
Attorney, Agent or Firm:
Shusaku Yamamoto