To provide a method of manufacturing a semiconductor device which uses an improved polishing pad for polishing a semiconductor wafer.
A method of manufacturing a semiconductor device comprising the steps of forming metal lines 32 on a surface of a semiconductor wafer 23; constructing a work surface by making a coating 30 adhered on the surface of the semiconductor wafer 23, on which the metal lines 32 are formed; preparing a polishing pad which has (a) a first layer C1, having a base and an outer surface disposed on the opposite side of the base, and further having a strain constant in the range of 6-12 microns/psi, when a prescribed compression pressure exceeding 4 psi is applied thereto, and (b) a second layer D1, having a polishing surface 22B for polishing a work surface 23B, and a lower surface 22A, which is disposed on a side opposite to the polishing surface 22B and connected to at least a portion of the outer surface, and further having a strain constant smaller than that of the first layer C1, when a prescribed compressing pressure is applied; and polishing the work surface 23B of the semiconductor wafer 23 with the polishing pad, by using the polishing apparatus.
Fumiaki Otsuka
Shishido Kaichi
Toshio Imajo
Nobuo Ogawa
Village shrine Atsuo
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