To provide a method for flattening a metallic film on a semiconductor device for quickly grinding a metallic film under low grinding pressure conditions, and for suppressing the generation of the defects of a grinding face such as scratch or dishing, in a process for flattening a metallic film on the semiconductor device, and also to provide a method for manufacturing the semiconductor device.

This chemical machine grinding device is configured to store a metallic grinding composition characterized by containing polyoxo-oxide, anion interface activator and water and a substrate having a metallic film on a chuck table by making the surface of the metallic film face up, to relatively pressurize the grinding pad face attached to a mounting board axially supported by a spindle shaft whose axial core is vertical through the metallic grinding composition to the substrate, and to remove at least a part of the metallic film on the surface of the substrate by making the substrate and the grinding pad slide. This chemical machine grinding device is provided with the elevating mechanism of the grinding pad and a transport mechanism for moving the grinding pad right and left, and characterized by shaping the grinding pad as an annular body where the central part of a circle or ellipse is bored like a circle or ellipse whose diameter is much smaller, and the diameter of the grinding pad is smaller than that of the substrate. This method for manufacturing a semiconductor device is characterized by using the chemical machine grinding device.