Title:
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2020095999
Kind Code:
A
Abstract:
To provide a method of manufacturing a semiconductor device and a semiconductor device in which disconnection is suppressed.SOLUTION: The method of manufacturing a semiconductor device includes: affixing an upper substrate on an upper surface of a sensor substrate on which an acceleration sensor is formed; forming a mask for providing on an upper surface of the upper substrate a first opening and a second opening, connected to the first opening, having a width that decreases with increasing distance from the first opening; forming a slope immediately below the second opening on the upper substrate, a height of which increases as a distance from the first opening increases by sandblasting the upper substrate exposed from the first opening and the second opening to expose the sensor substrate immediately below the first opening; and forming a first wiring in contact with the exposed sensor substrate and a second wiring in contact with the slope and connected to the first wiring.SELECTED DRAWING: Figure 3
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Inventors:
YAMAGUCHI YASUO
Application Number:
JP2018230608A
Publication Date:
June 18, 2020
Filing Date:
December 10, 2018
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
B24C1/00; H01L21/304; B24C1/04; B24C3/32; B24C5/04; G01P15/08; G01P15/125; H01L21/3205; H01L21/768; H01L23/522; H01L23/532; H05K3/00
Domestic Patent References:
| JP2003322662A | 2003-11-14 | |||
| JP2011222796A | 2011-11-04 | |||
| JP2011249718A | 2011-12-08 | |||
| JPH1197171A | 1999-04-09 | |||
| JP2008124150A | 2008-05-29 |
Foreign References:
| US20060189124A1 | 2006-08-24 |
Attorney, Agent or Firm:
Mamoru Takada
Hideki Takahashi
Yoshimi Kuno
Hideki Takahashi
Yoshimi Kuno